E-Beam Lithography

Contacts: Yossi Abulafia, yossi.abulafia@biu.ac.il

Model:  Elionix 100Kev

Manufacture:  Elionix

Description: E-Beam lithograpy with 100KeV Acceleration voltage for sub-micron resolution.  

EBL is a direct writing technique that uses an accelerated beam of electrons to pattern features down to sub-10 nm on substrates that have been coated with an electron beam sensitive resist. EBL span a wide range of nanostructured devices including electronic devices, opto-electronic devices, quantum structures, metamaterials, transport mechanism studies of semiconductor/superconductor interfaces, microelectromechanical systems, optical, and photonic devices and more.  

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