Ion Implanter

A small homemade ion implanter developed in Bar Ilan is designed to to obtain ion beams from  Nobile one-atomic gases (He+, Ar+, etc.), and molecular beams of N2+ and H2+ with:

•   the energy range of 3-30 KeV

•   fluencies of 1014- 5x1018 cm-2 with ion currents up to 1 mA/cm2.

The original design of this facility was established on the application of a negative high voltage to the sample holder in the implantation chamber. This voltage accelerates positive ions created in a hollow cathode ion source and forms a uniform areal density of implanted ions.