Ion Implanter

A small homemade ion implanter developed in Bar Ilan is designed to to obtain ion beams from  Nobile one-atomic gases (He⁺, Ar⁺, etc.), and molecular beams of N²⁺ and H²⁺ with:

•   the energy range of 3-30 KeV

•   fluencies of 10¹⁴- 5x10¹⁸ cm^-2 with ion currents up to 1 mA/cm².

The original design of this facility was established on the application of a negative high voltage to the sample holder in the implantation chamber. This voltage accelerates positive ions created in a hollow cathode ion source and forms a uniform areal density of implanted ions.