A small homemade ion implanter developed in Bar Ilan is designed to to obtain ion beams from Nobile one-atomic gases (He+, Ar+, etc.), and molecular beams of N2+ and H2+ with:
• the energy range of 3-30 KeV
• fluencies of 1014- 5x1018 cm-2 with ion currents up to 1 mA/cm2.
The original design of this facility was established on the application of a negative high voltage to the sample holder in the implantation chamber. This voltage accelerates positive ions created in a hollow cathode ion source and forms a uniform areal density of implanted ions.
תאריך עדכון אחרון : 23/12/2021