Ion Implanter
Contacts: Dr. Olga Girshevitz, olga.girshevitz@biu.ac.il
Dr. Vladimir Richter, tyutyu563@gmail.com
A small homemade ion implanter developed in Bar Ilan is designed to obtain ion beams from Noble one-atomic gases (He+, Ar+, etc.), and molecular beams of N2+ and H2+ with:
• the energy range of 3-30 KeV
• fluencies of 1014- 5x1018 cm-2 with ion currents up to 1 mA/cm2
The original design of this facility is based on the application of a negative high voltage to the sample holder in the implantation chamber. This voltage accelerates positive ions created in a hollow cathode ion source and forms a uniform areal density of implanted ions
