Focused Ion Beam (FIB)

Nano-imaging, elemental composition analysis & high presicion milling, deposition at the nano and micro-scales

Dual-beam system combining SEM and FIB for high-resolution imaging, cross-sectioning, material analysis, and 3D reconstruction. Ideal for TEM sample prep, device modification, failure analysis, and tomography. Includes EDX and cryo-stage.

BINA's Characterization Unit welcomes both industry professionals and researchers – providing state-of-the-art equipment, expert support, and customized solutions. We’re here for you!

Contacts: Dr. Sasha Domantovsky,  alexander.domantovsky@biu.ac.il

FIB

Model: Helios 5UC DualBeam

Manufacture: Thermo Fisher Scientific, USA

Resolution:

                Electron beam: 0.6 nm at 15 kV; 1.2 nm at 1 kV

                Ion beam at coincident point: 4.0 nm at 30 kV

Specifications:

  • Electron beam current range: 1.6 pA to 100 nA
  • Accelerating voltage range:350 V – 30 kV
  • Ion beam current range: 1 pA – 100 nA
  • Accelerating voltage range: 500 V – 30 kV

Analytical and imaging detectors:

  • Secondary electrons detectors
  • Secondary ions detector
  • Backscattered electrons detectors
  • Electron detector for STEM
  • X-ray detector for energy-dispersive X-ray spectroscopy