Ion Beam Supttering System
Specifications:
- 4 targets and ION ASSIST/Etch source
- Low pressure sputter deposition (10-4 Torr)
- High quality, smooth, pin hole free films
- Enhanced adhesion and micro-structure control
- Independent control of ion beam parameters allows user to engineer film with desired properties
Materials that may be deposited
- Oxides: SiO2, Al2O3, HfO2, Ta2O5, TiO2
- Metals: Al, Ag, Ta, Ti, Nb
- Others: Ge, Si, Si p-type, Si n-type, Permalloy, ITO, FTO, MOL4, SiC
Ion Beam sputter Deposition (IBSD)
