Ion Beam Supttering System
Specifications:
4 targets and ION ASSIST/Etch source
Low pressure sputter deposition (10-4 Torr)
High quality, smooth, pin hole free films
Enhanced adhesion and micro-structure control
Independent control of ion beam parameters allows user to engineer film with desired properties
Materials that may be deposited
Oxides: SiO2, Al2O3, HfO2, Ta2O5, TiO2
Metals: Al, Ag, Ta, Ti, Nb
Others: Ge, Si, Si p-type, Si n-type, Permalloy, ITO, FTO, MOL4, SiC
Ion Beam sputter Deposition (IBSD)
