Ion Beam Supttering System

English

Specifications:

  • 4 targets and ION ASSIST/Etch source

  • Low pressure sputter deposition (10-4 Torr)

  • High quality, smooth, pin hole free films

  • Enhanced adhesion and micro-structure control

  • Independent control of ion beam parameters allows user to engineer film with desired properties

Materials that may be deposited

  • Oxides: SiO2, Al2O3, HfO2, Ta2O5, TiO2

  • Metals: Al, Ag, Ta, Ti, Nb

  • Others: Ge, Si, Si p-type, Si n-type, Permalloy, ITO, FTO, MOL4, SiC

 

Ion Beam sputter Deposition (IBSD)

 

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