e-beam Lithography

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Quantum & photonic nanofabrication

High-resolution e-beam lithography system with 100 keV acceleration voltage for sub-10 nm patterning on electron-sensitive resist-coated substrates.
 
BINA's Fabrication Unit welcomes both industry professionals and researchers – providing state-of-the-art equipment, expert support, and customized solutions. We’re here for you!
 

Head of Service Center: Dr. Olga Girshevitz, olga.girshevitz@biu.ac.il

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Model:  Elionix ELS Boden 100

Manufacture:  Elionix

Description: e-Beam lithograpy with 100KeV Acceleration voltage for sub-10 nm resolution

EBL is a direct writing technique that uses an accelerated beam of electrons to pattern features down to sub-10 nm on substrates that have been coated with an electron beam sensitive resist. EBL span a wide range of nanostructured devices including electronic devices, opto-electronic devices, quantum structures, metamaterials, transport mechanism studies of semiconductor/superconductor interfaces, microelectromechanical systems, optical, and photonic devices and more.  

Specifications:

  • Acceleration voltage             100 kV

  • Exposure method                 Gaussian spot beam, vector scan, and step-and-repeat

  • Min. beam diameter             1.8 nm

  • Shot pitch                              0.2 nm

  • Beam current intensity        20 pA ~ 100 nA

  • Standard field size                1,000 μm

  • Minimum field size               100 μm

  • Maximum field size              3,000 μm

  • Scan clock                             200 MHz

  • Max. sample size                  8” wafer

  • Sample Pre-Alignment station prior to a loading to the vacuum system

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