Maskless Lithography, MLA
Specifications:
- Minimum structure size [μm] 1
- Global 2nd layer alignment [3σ, nm] 500
- Local 2nd layer alignment [3σ, nm] 250
- Exposure time 405 nm laser for 4“ wafer [min] 9
- Exposure time 375 nm laser for 4“ wafer [min] 20
- Max. write speed 375 nm laser [mm2 /min] 500
- Max. write speed 405 nm laser [mm2 /min] 1100
- Interferometric 200 mm x-y-Stage System with position resolution of 20 nm
- Min. Substrate Size: 5 x 5 mm²
- Max. Substrate Size: 200 x 200 mm²
- Substrate Thickness: 0 to 12 mm
