Maskless Lithography, MLA

Specifications:

• Minimum structure size                                  1μm
• Linewidth variation [3σ]                                 120 nm
• Global 2nd layer alignment [3σ]                     500 nm
• Local 2nd layer alignment [3σ]                       250 nm
• Light source: Diode lasers 405 nm and           375 nm
• Exposure time 405 nm laser for 4“ wafer        9 min
• Exposure time 375 nm laser for 4“ wafer        20 min
• Max. write speed 375 nm laser                        500 mm² /min
• Max. write speed 405 nm laser                       1100 mm² /min
• Interferometric 200 mm x-y-Stage System with position resolution of 20 nm
• Min. Substrate Size                                           5 x 5 mm²
• Max. Substrate Size                                          200 x 200 mm²
• Substrate Thickness                                          0 to 12 mm
• Temperature controlled flow box Temperature stability ±0.1°

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