Maskless Lithography, MLA
Specifications:
Minimum structure size 1μm
Linewidth variation [3σ] 120 nm
Global 2nd layer alignment [3σ] 500 nm
Local 2nd layer alignment [3σ] 250 nm
Light source: Diode lasers 405 nm and 375 nm
Exposure time 405 nm laser for 4“ wafer 9 min
Exposure time 375 nm laser for 4“ wafer 20 min
Max. write speed 375 nm laser 500 mm2 /min
Max. write speed 405 nm laser 1100 mm2 /min
Interferometric 200 mm x-y-Stage System with position resolution of 20 nm
Min. Substrate Size 5 x 5 mm²
Max. Substrate Size 200 x 200 mm²
Substrate Thickness 0 to 12 mm
Temperature controlled flow box Temperature stability ±0.1°
