E-Beam Lithography
Specifications:
- Acceleration voltage 100 kV
- Exposure method Gaussian spot beam, vector scan, and step-and-repeat
- Min. beam diameter 1.8 nm
- Shot pitch 0.2 nm
- Beam current intensity 20 pA ~ 100 nA
- Standard field size 1,000 μm
- Minimum field size 100 μm
- Maximum field size 3,000 μm
- Scan clock 200 MHz
- Max. sample size 8” wafer
- Sample Pre-Alignment station prior to a loading to the vacuum system
