PVD system (Sputtering, Thermal and e-Beam evaporation)
Specifications:
Sputtering chamber equipped with 4 magnetrons DC (for conductors)
- Ion beam gun (for etching/ cleaning)
- Evaporation chamber equipped with e-beam gun (4 sources) and thermal evaporator (2 sources)
- Sample size - Up to 4”
- Load Lock and transferring chamber
- Sample rotation – up to 30rpm
- Heating during the process up to 400 °C
Available materials:
| Evaporation Materials | Sputtering Materials | ||||||||
| Silver | Silver | ||||||||
| Aluminum Oxide | Aluminum | ||||||||
| Cobalt | Aluminum Oxide | ||||||||
| Copper | Gold | ||||||||
| Chromium | Carbon Graphite | ||||||||
| Iron | Copper | ||||||||
| Germanium | Chromium | ||||||||
| Indium | Iron | ||||||||
| Magnesium Fluoride | Germanium | ||||||||
| Molybdenum | Indium Tin Oxide | ||||||||
| Nickel | Manganese | ||||||||
| Palladium | Magnesium fluoride | ||||||||
| Platinum | Niobium | ||||||||
| Silicon | Nickel | ||||||||
| Silicon Dioxide | Nickel Oxide | ||||||||
| Tantalum | Permalloy Ni/Fe/Mo/Mn | ||||||||
| Titanium | Permalloy Ni/Fe | ||||||||
| Zinc | Platinum | ||||||||
| Silicon Dioxide | |||||||||
| Tantalum | |||||||||
| Titanium | |||||||||
| Titanium Oxide | |||||||||
| Zink Oxide | |||||||||
