PVD system (Sputtering, Thermal and e-Beam evaporation)
Specifications:
Sputtering chamber equipped with 4 magnetrons DC (for conductors)
Ion beam gun (for etching/ cleaning)
Evaporation chamber equipped with e-beam gun (4 sources) and thermal evaporator (2 sources)
Sample size - Up to 4”
Load Lock and transferring chamber
Sample rotation – up to 30rpm
Heating during the process up to 400 °C
Available materials:
| Sputtering Materials | Evaporation Materials | ||||||||
| Silver | Silver | ||||||||
| Aluminum | Aluminum Oxide | ||||||||
| Aluminum Oxide | Cobalt | ||||||||
| Gold | Copper | ||||||||
| Carbon Graphite | Chromium | ||||||||
| Copper | Iron | ||||||||
| Chromium | Germanium | ||||||||
| Iron | Indium | ||||||||
| Germanium | Magnesium Fluoride | ||||||||
| Indium Tin Oxide | Molybdenum | ||||||||
| Manganese | Nickel | ||||||||
| Magnesium Fluoride | Palladium | ||||||||
| Niobium | Platinum | ||||||||
| Nickel | Silicon | ||||||||
| Nickel Oxide | Silicon Dioxide | ||||||||
| Permalloy Ni/Fe/Mo/Mn | Tantalum | ||||||||
| Permalloy Ni/Fe | Titanium | ||||||||
| Platinum | Zinc | ||||||||
| Silicon Dioxide | |||||||||
| Tantalum | |||||||||
| Titanium | |||||||||
| Titanium Oxide | |||||||||
| Zink Oxide |
