Mask Aligner
Photolithography & MEMS
Mask aligner designed for all standard lithography applications and thick-resist MEMS applications.
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Contacts: Mr. Mark Oksman, mark.oksman@biu.ac.il
Model: MA/BA6
Manufacture: SUSS MicroTec
Description:
Mask aligner designed for all standard lithography applications and thick-resist MEMS applications
Specifications:
- The SUSS MA/BA6 mask aligner designed for all standard lithography applications. For thick-resist MEMS applications, the MA/BA6 offers high resolution and optimum edge quality.
- The MA/BA6 offers various exposure modes to meet any requirements for a broad range of applications.
- Soft, hard and vacuum contact printing is used to achieve highest resolution down to submicron range.
- Proximity printing is applied to avoid any mask/wafer contact.
- The bottom side alignment option allows for pattern printing on both sides of the substrate and widely used for MEMS applications.
- Wafer Size from 1” up to 150 mm.
- Substrate Size up to 6" x 6“.
- Pieces down to 5 x 5 mm.
- Resolution: down to 0.75 μ, mask and photoresist thickness dependent.
Last Updated Date : 25/06/2025