Dry Etch ICP-RIE

Advanced dry etching

High-density plasma etching system with independent control of ion flux and energy. Supports fluorine and chlorine chemistries with extensive process library.

Contacts: Mr. Mark Oksman, mark.oksman@biu.ac.il

Model:  Versaline SLR 770 ICP RIE

Manufacture:  Plasmatherm

Description:

Dry Etch ICP-RIE produces high density plasma with the ability to control both ion flux and ion energy independently. Our system includes with 12 gas lines for Fluorine and Chlorine process and large library of processes for electronic, photonic, MEMS, and nanotechnology applications.

Specifications:

• 12 gas lines for different process, including (CL2, BCL3, SF6, etc.)
  • II-VIs and III-Vs: e.g. GaN, AlN
  • Silicon based: e.g. Si, Ge, SiGe, poly-Si, SiC, SiO₂, SiNx, quartz
  • Polymers: e.g. PR, PI, BCB
  • Metals: e.g. Al, Cr, V, W, Mo, Ti, Ta, Nb
  • Metal oxides and nitrides: e.g. TiN, TaN, TiOx, TaOx, NbN
• Laser interferometry
• Optical emission spectroscopy (OES)
• 2 MHz ICP RF for efficient coupling of power to the plasma
• RIE and ICP and combined processes
• temperature ranges from –40ºC to 40ºC
• 4" and pieces