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Reactive Ion etcher

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Specifications
  • Semi-Automatic Load Lock for single wafer
  • ICP-II source with 2.5KW/2MHz RF source
  • Low temperature heat exchanger down to -40°C
  • 12 gas lines for Chlorine and Fluorine process
  • OES Endpoint and Laser Endpoint for process control 
Reactive Ion etcher

Last Updated Date : 30/06/2021