Focused Ion Beam (FIB)

High-resolution surface imaging and characterization of topography and physical properties using a scanning probe. Operates under various environmental conditions.

BINA's Characterization Unit welcomes both industry professionals and researchers – providing state-of-the-art equipment, expert support, and customized solutions. We’re here for you!

Contacts: Dr. Sasha Domantovsky,  alexander.domantovsky@biu.ac.il

Model: Helios 5UC DualBeam

Manufacture: Thermo Fisher Scientific, USA

Description:

Dual-beam system combining SEM and FIB for high-resolution imaging, cross-sectioning, material analysis, and 3D reconstruction. Ideal for TEM sample prep, device modification, failure analysis, and tomography. Includes EDX and cryo-stage.

Resolution:

                 Electron beam: 0.6 nm at 15 kV; 1.2 nm at 1 kV

                 Ion beam at coincident point: 4.0 nm at 30 kV

Specifications:

• Electron beam current range: 1.6 pA to 100 nA
• Accelerating voltage range:350 V – 30 kV
• Ion beam current range: 1 pA – 100 nA
• Accelerating voltage range: 500 V – 30 kV

Analytical and imaging detectors:

• Secondary electrons detectors
• Secondary ions detector
• Backscattered electrons detectors
• Electron detector for STEM
• X-ray detector for energy-dispersive X-ray spectroscopy