Dry Etch ICP-RIE

Specifications:

  • 12 gas lines for different process, including (CL2, BCL3, SF6, etc.)
    • II-VIs and III-Vs: e.g. GaN, AlN
    • Silicon based: e.g. Si, Ge, SiGe, poly-Si, SiC, SiO2, SiNx, quartz
    • Polymers: e.g. PR, PI, BCB
    •  Metals: e.g. Al, Cr, V, W, Mo, Ti, Ta, Nb
    •  Metal oxides and nitrides: e.g. TiN, TaN, TiOx, TaOx, NbN
    •  Piezoelectrics: e.g. LiNbO3, LiTaO3
  • Laser interferometry
  • Optical emission spectroscopy (OES)
  • 2 MHz ICP RF for efficient coupling of power to the plasma
  • RIE and ICP and combined processes
  • temperature ranges from –40ºC to 40ºC
  • 4" and pieces

 

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