A Surprising New Kind of Memory- Discovered in 1T-TaS₂

In a remarkable study, Prof. Amos Sharoni and his team have uncovered a novel memory effect in the layered material 1T-TaS₂. By reversing the direction of temperature change at a specific point, the material effectively “remembers” that moment, altering its resistance in a way that reflects its thermal history.

This kind of memory, known as Ramp Reversal Memory (RRM), was previously observed only in thin-film oxides. But here’s the twist: the effect in 1T-TaS₂ appears in bulk crystals, it occurs during cooling (not heating, as seen before), and it’s an order of magnitude stronger.

🌍 Why it matters:

·It could pave the way for new types of non-volatile memory that operate with minimal energy.
·It shows that memory phenomena are more widespread than previously thought, possibly universal in materials with phase coexistence.
·It may offer insights into how systems transition between electronic phases, which is key for designing future quantum and neuromorphic devices.

An exciting leap that blends elegant physics with real potential for technology.

Kudos to Prof. Amos Sharoni, Avital Fried, and the rest of the team on this inspiring work.

🔗 https://doi.org/10.1002/adfm.202504649