Fast optoelectronic responsivity of metal-oxide-semiconductor nanostructures

The frequency dependence of the capacitance variation between dark and near-infrared-modulated illumination conditions is measured for metal-oxide-semiconductor structures with germanium nanocrystals embedded in a thick SiO2 film grown on a silicon substrate. The results have shown that the device is expected to be sensitive at high frequencies (up to 111 GHz) making it a good candidate for optoelectronic high-speed use and for optical communication applications. (C) 2016 Society of Photo-Optical Instrumentation Engineers (SPIE).