Basic model of absorption depth and injection levels in silicon under intermediate illumination levels

In this paper we present a novel model that connects the absorption depth of photons into silicon with the power of the applied illumination. So far in the literature the absorption depth was solely dependent on the wavelength of the illuminating photons. The new relation is important for better designing silicon based devices that are illuminated with high power lasers. Experimental results validate the proposed modeling. (C) 2012 Elsevier B.V. All rights reserved.