Mask Aligner
Specifications:
The SUSS MA/BA6 mask aligner designed for all standard lithography applications. For thick-resist MEMS applications, the MA/BA6 offers high resolution and optimum edge quality.
The MA/BA6 offers various exposure modes to meet any requirements for a broad range of applications.
Soft, hard and vacuum contact printing is used to achieve highest resolution down to submicron range.
Proximity printing is applied to avoid any mask/wafer contact.
The bottom side alignment option allows for pattern printing on both sides of the substrate and widely used for MEMS applications.
Wafer Size from 1” up to 150 mm
Substrate Size up to 6" x 6“
Pieces down to 5 x 5 mm
Resolution: down to 0.75 μ, mask and photoresist thickness dependent