Four-wave mixing and nonlinear parameter measurement in a gallium-nitride ridge waveguide

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Gallium-nitride (GaN) is a promising material platform for integrated electro-optic devices due to its wide direct bandgap, pronounced nonlinearities and high optical damage threshold. Low-loss ridge waveguides in GaN layers were recently demonstrated. In this work, we provide the first report of four-wave mixing in a GaN waveguide at telecommunication wavelengths, and observe comparatively high nonlinear propagation parameters. The nonlinear coefficient of the waveguide is measured as 1.6 +/- 0.45 [W x m](-1), and the corresponding third-order nonlinear parameter of GaN is estimated as 3.4 +/- 1e-18 [m(2)/W]. The results suggest that GaN waveguides could be instrumental in nonlinear-optical signal processing applications. (C) 2017 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
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